1. ScholarBank@NUS

Chua Soo Jin

rp04195

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Chua Soo Jin
Variants
Chua, Soo-Jin
CHUA SOON JIN
Chua, S.-J.
CHUA, SOO-JIN
Jin, C.S.
Jin Chua, S.
S.J. Chua
Chua, Soojin
Soo Jin, Chua
Soo-Jin, C.
Jin, Chua Soo
Chua, S.
Chua, Soo-jin
Chua Soo Jin
CHUA, SOO JIN
Chun, S.-J.
Soo, J.C.
Chua, Soo Jin
Chua, S.J.
CHUA, SOON JIN
 
Main Affiliation
 
Faculty
 
Email
elecsj@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Department:  ELECTRICAL & COMPUTER ENGINEERING
Author:  Chua, S.J.
Author:  Liu, W.

Results 1-20 of 22 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11-Aug-2004Assignment of deep levels causing yellow luminescence in GaNSoh, C.B.; Chua, S.J. ; Lim, H.F.; Chi, D.Z.; Tripathy, S.; Liu, W.
21-Aug-2004Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor depositionLiu, W.; Soh, C.B.; Chen, P.; Chua, S.J. 
32008Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructuresSoh, C.B.; Liu, W.; Teng, J.H.; Chow, S.Y.; Ang, S.S.; Chua, S.J. 
426-Mar-2007Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaNSoh, C.B.; Chua, S.J. ; Chen, P.; Chi, D.Z.; Liu, W.; Hartono, H.
52006Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nmLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. 
615-Dec-2005Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaNWang, X.C.; Lim, G.C.; Liu, W.; Soh, C.B.; Chua, S.J. 
72008Enhanced luminescence efficiency due to carrier localization in InGaNGaN heterostructures grown on nanoporous GaN templatesSoh, C.B.; Chow, S.Y.; Liu, W.; Chua, S.J. ; Tan, L.Y. ; Hartono, H.
89-May-2011Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaNSoh, C.B.; Liu, W.; Hartono, H.; Ang, N.S.S.; Chua, S.J. ; Chow, S.Y.; Tay, C.B. ; Vajpeyi, A.P.
91-Nov-2010Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layerSoh, C.B.; Liu, W.; Chua, S.J. ; Ang, S.S.; Tan, R.J.N.; Chow, S.Y.
102005High optical quality nanoporous GaN prepared by photoelectrochemical etchingVajpeyi, A.P.; Chua, S.J. ; Tripathy, S.; Fitzgerald, E.A.; Liu, W.; Chen, P.; Wang, L.S.
111-Sep-2004Identification of deep levels in GaN associated with dislocationsSoh, C.B.; Chua, S.J. ; Lim, H.F.; Chi, D.Z.; Liu, W.; Tripathy, S.
1215-Nov-2005Influence of composition pulling effect on the two-dimensional electron gas formed at Al y In x Ga 1-x-yNGaN interfaceSoh, C.B.; Chua, S.J. ; Tripathy, S.; Chow, S.Y.; Chi, D.Z.; Liu, W.
131-Aug-2004Inverted hexagonal pits formation in AlInGaN epilayerSoh, C.B.; Liu, W.; Chua, S.J. ; Tripathy, S.; Chi, D.Z.
14Jul-2009Novel tunable phosphor-free white III-nitride light emitting diodes based on indium rich InGaN nanostructuresSoh, C.B.; Liu, W.; Chua, S.J. ; Teng, J.H.; Tan, R.J.N.; Ang, S.S.
151-Aug-2004Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric fieldZhang, X.H.; Liu, W.; Chua, S.J. 
16Nov-2010Phosphor-free apple-white LEDs with embedded indium-rich nanostructures grown on strain relaxed nano-epitaxy GaNSoh, C.B.; Liu, W.; Yong, A.M.; Chua, S.J. ; Chow, S.Y.; Tripathy, S.; Tan, R.J.N.
172005Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopySoh, C.B.; Liu, W.; Chua, S.J. ; Tripathy, S.; Chi, D.Z.
182008Quantum dots excited InGaN/GaN phosphor-free white LEDsChua, S.J. ; Soh, C.B.; Liu, W.; Teng, J.H.; Ang, S.S.; Teo, S.L.
192008Suppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirrorLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Chua, S.J. 
2026-Jul-2010The effects of cap layers on electrical properties of indium nitride filmsLiu, W.; Tan, R.J.N.; Soh, C.B.; Chua, S.J.