Please use this identifier to cite or link to this item: https://doi.org/10.1007/s11671-010-9712-0
Title: Phosphor-free apple-white LEDs with embedded indium-rich nanostructures grown on strain relaxed nano-epitaxy GaN
Authors: Soh, C.B.
Liu, W.
Yong, A.M.
Chua, S.J. 
Chow, S.Y.
Tripathy, S.
Tan, R.J.N.
Keywords: III-Nitride semiconductor
LEDs
Quantum dots
Issue Date: Nov-2010
Citation: Soh, C.B., Liu, W., Yong, A.M., Chua, S.J., Chow, S.Y., Tripathy, S., Tan, R.J.N. (2010-11). Phosphor-free apple-white LEDs with embedded indium-rich nanostructures grown on strain relaxed nano-epitaxy GaN. Nanoscale Research Letters 5 (11) : 1788-1794. ScholarBank@NUS Repository. https://doi.org/10.1007/s11671-010-9712-0
Abstract: Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO 2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η extraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period. © 2010 The Author(s).
Source Title: Nanoscale Research Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82894
ISSN: 19317573
DOI: 10.1007/s11671-010-9712-0
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