Please use this identifier to cite or link to this item:
|Title:||Assignment of deep levels causing yellow luminescence in GaN||Authors:||Soh, C.B.
|Issue Date:||1-Aug-2004||Citation:||Soh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., Liu, W. (2004-08-01). Assignment of deep levels causing yellow luminescence in GaN. Journal of Applied Physics 96 (3) : 1341-1347. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757654||Abstract:||The deep levels causing yellow luminescence transitions in GaN were investigated using photoluminescence, hall measurements, and deep level transient spectroscopy (DLTS). The presence of donor levels at ~18, ~35, ~70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies were observed when the Si-doped GaN were measured. Reduction in yellow luminescence was observed when the thermal annealing of nitrogen ambient is done at 750°C. The results showed that yellow luminescence in GaN arises from the transitions from the Ec∓ (0.2∓0.24) eV levels to the deep level at Ev +0.87 eV.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/81986||ISSN:||00218979||DOI:||10.1063/1.1757654|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 6, 2021
WEB OF SCIENCETM
checked on Feb 24, 2021
checked on Mar 1, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.