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https://doi.org/10.1063/1.1757654
Title: | Assignment of deep levels causing yellow luminescence in GaN | Authors: | Soh, C.B. Chua, S.J. Lim, H.F. Chi, D.Z. Tripathy, S. Liu, W. |
Issue Date: | 1-Aug-2004 | Citation: | Soh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., Liu, W. (2004-08-01). Assignment of deep levels causing yellow luminescence in GaN. Journal of Applied Physics 96 (3) : 1341-1347. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757654 | Abstract: | The deep levels causing yellow luminescence transitions in GaN were investigated using photoluminescence, hall measurements, and deep level transient spectroscopy (DLTS). The presence of donor levels at ~18, ~35, ~70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies were observed when the Si-doped GaN were measured. Reduction in yellow luminescence was observed when the thermal annealing of nitrogen ambient is done at 750°C. The results showed that yellow luminescence in GaN arises from the transitions from the Ec∓ (0.2∓0.24) eV levels to the deep level at Ev +0.87 eV. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/81986 | ISSN: | 00218979 | DOI: | 10.1063/1.1757654 |
Appears in Collections: | Staff Publications |
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