Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1757654
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dc.titleAssignment of deep levels causing yellow luminescence in GaN
dc.contributor.authorSoh, C.B.
dc.contributor.authorChua, S.J.
dc.contributor.authorLim, H.F.
dc.contributor.authorChi, D.Z.
dc.contributor.authorTripathy, S.
dc.contributor.authorLiu, W.
dc.date.accessioned2014-10-07T04:24:02Z
dc.date.available2014-10-07T04:24:02Z
dc.date.issued2004-08-01
dc.identifier.citationSoh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., Liu, W. (2004-08-01). Assignment of deep levels causing yellow luminescence in GaN. Journal of Applied Physics 96 (3) : 1341-1347. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757654
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81986
dc.description.abstractThe deep levels causing yellow luminescence transitions in GaN were investigated using photoluminescence, hall measurements, and deep level transient spectroscopy (DLTS). The presence of donor levels at ~18, ~35, ~70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies were observed when the Si-doped GaN were measured. Reduction in yellow luminescence was observed when the thermal annealing of nitrogen ambient is done at 750°C. The results showed that yellow luminescence in GaN arises from the transitions from the Ec∓ (0.2∓0.24) eV levels to the deep level at Ev +0.87 eV.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1757654
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1757654
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume96
dc.description.issue3
dc.description.page1341-1347
dc.description.codenJAPIA
dc.identifier.isiut000222936900009
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