Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1757654
Title: Assignment of deep levels causing yellow luminescence in GaN
Authors: Soh, C.B.
Chua, S.J. 
Lim, H.F.
Chi, D.Z.
Tripathy, S.
Liu, W.
Issue Date: 1-Aug-2004
Source: Soh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., Liu, W. (2004-08-01). Assignment of deep levels causing yellow luminescence in GaN. Journal of Applied Physics 96 (3) : 1341-1347. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757654
Abstract: The deep levels causing yellow luminescence transitions in GaN were investigated using photoluminescence, hall measurements, and deep level transient spectroscopy (DLTS). The presence of donor levels at ~18, ~35, ~70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies were observed when the Si-doped GaN were measured. Reduction in yellow luminescence was observed when the thermal annealing of nitrogen ambient is done at 750°C. The results showed that yellow luminescence in GaN arises from the transitions from the Ec∓ (0.2∓0.24) eV levels to the deep level at Ev +0.87 eV.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/81986
ISSN: 00218979
DOI: 10.1063/1.1757654
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