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|Title:||Assignment of deep levels causing yellow luminescence in GaN|
|Citation:||Soh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., Liu, W. (2004-08-01). Assignment of deep levels causing yellow luminescence in GaN. Journal of Applied Physics 96 (3) : 1341-1347. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757654|
|Abstract:||The deep levels causing yellow luminescence transitions in GaN were investigated using photoluminescence, hall measurements, and deep level transient spectroscopy (DLTS). The presence of donor levels at ~18, ~35, ~70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies were observed when the Si-doped GaN were measured. Reduction in yellow luminescence was observed when the thermal annealing of nitrogen ambient is done at 750°C. The results showed that yellow luminescence in GaN arises from the transitions from the Ec∓ (0.2∓0.24) eV levels to the deep level at Ev +0.87 eV.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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