Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1757654
DC Field | Value | |
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dc.title | Assignment of deep levels causing yellow luminescence in GaN | |
dc.contributor.author | Soh, C.B. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Lim, H.F. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Tripathy, S. | |
dc.contributor.author | Liu, W. | |
dc.date.accessioned | 2014-10-07T04:24:02Z | |
dc.date.available | 2014-10-07T04:24:02Z | |
dc.date.issued | 2004-08-01 | |
dc.identifier.citation | Soh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., Liu, W. (2004-08-01). Assignment of deep levels causing yellow luminescence in GaN. Journal of Applied Physics 96 (3) : 1341-1347. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757654 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81986 | |
dc.description.abstract | The deep levels causing yellow luminescence transitions in GaN were investigated using photoluminescence, hall measurements, and deep level transient spectroscopy (DLTS). The presence of donor levels at ~18, ~35, ~70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies were observed when the Si-doped GaN were measured. Reduction in yellow luminescence was observed when the thermal annealing of nitrogen ambient is done at 750°C. The results showed that yellow luminescence in GaN arises from the transitions from the Ec∓ (0.2∓0.24) eV levels to the deep level at Ev +0.87 eV. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1757654 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1757654 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 96 | |
dc.description.issue | 3 | |
dc.description.page | 1341-1347 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000222936900009 | |
Appears in Collections: | Staff Publications |
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