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Title: Quantum dots excited InGaN/GaN phosphor-free white LEDs
Authors: Chua, S.J. 
Soh, C.B.
Liu, W.
Teng, J.H.
Ang, S.S.
Teo, S.L.
Issue Date: 2008
Citation: Chua, S.J., Soh, C.B., Liu, W., Teng, J.H., Ang, S.S., Teo, S.L. (2008). Quantum dots excited InGaN/GaN phosphor-free white LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics 5 (6) : 2189-2191. ScholarBank@NUS Repository.
Abstract: Commercial GaN based white LEDs have been fabricated using phosphor coating of blue LEDs. We report on the growth of InGaN/GaN based white LEDs using In-rich InGaN quantum dots incorporated in the MQW layers. The photoluminescence spectrum of the MQWs shows a broad emission spectrum covering 400 to 700 nm. Cross-section TEM shows the existence of pyramidal shaped quantum-like structures with size of 1.5-2.0 nm embedded in the InGaN well. To prevent the out-diffusion of these InGaN quantum dots in the well layer during thermal activation of p-GaN, a small amount of Indium was introduced into the p-GaN and the temperature was kept below 800°C for p-InGaN epilayer growth. I-V measurement of the white LEDs gives a forward voltage of 5.2 V for a current of IF ∼20mA. The chromaticity coordinate ranges from 0.28 < x,y < 0.34 with a colour temperature of ∼6000 K. The internal quantum efficiency was separately determined to be in excess of 50%. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Source Title: Physica Status Solidi (C) Current Topics in Solid State Physics
ISSN: 18626351
DOI: 10.1002/pssc.200778535
Appears in Collections:Staff Publications

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