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BRAM HOEX

rp02267

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Full Name
BRAM HOEX
(not current staff)
Variants
Hoex, B.
Hoex, Bram
 
Main Affiliation
 
Faculty
 
Email
serbh@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2010 TO 2020]
Subject:  Surface passivation

Results 1-8 of 8 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12013C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopyHoex, B. ; Bosman, M.; Nandakumar, N.; Kessels, W.M.M.
22014Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell applicationDuttagupta, S.; Ma, F.-J. ; Hoex, B. ; Aberle, A.G. 
32013Excellent surface passivation of silicon at low cost: Atomic layer deposited aluminium oxide from solar grade TMALin, F.; Nandakumar, N.; Dielissen, B.; Gortzen, R.; Hoex, B. 
42013Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective propertiesDuttagupta, S.; Ma, F.-J.; Hoex, B. ; Aberle, A.G. 
52012Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide filmsLin, F. ; Hoex, B. ; Koh, Y.H.; Lin, J.J. ; Aberle, A.G. 
62012Modelling and simulation of field-effect surface passivation of crystalline silicon-based solar cellsMa, F.-J. ; Hoex, B. ; Samudra, G.S. ; Aberle, A.G. 
7Jan-2012Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3Hoex, B. ; van de Sanden, M.C.M.; Schmidt, J.; Brendel, R.; Kessels, W.M.M.
8Jan-2012Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3Hoex, B. ; van de Sanden, M.C.M.; Schmidt, J.; Brendel, R.; Kessels, W.M.M.