Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssr.201105445
Title: Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3
Authors: Hoex, B. 
van de Sanden, M.C.M.
Schmidt, J.
Brendel, R.
Kessels, W.M.M.
Keywords: Aluminium oxide
N-type emitters
Solar cells
Surface passivation
Issue Date: Jan-2012
Citation: Hoex, B., van de Sanden, M.C.M., Schmidt, J., Brendel, R., Kessels, W.M.M. (2012-01). Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3. Physica Status Solidi - Rapid Research Letters 6 (1) : 4-6. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201105445
Abstract: In recent years Al 2O 3 has received tremendous interest in the photovoltaic community for the application as surface passivation layer for crystalline silicon. Especially p-type c-Si surfaces are very effectively passivated by Al 2O 3, including p-type emitters, due to the high fixed negative charge in the Al 2O 3 film. In this Letter we show that Al 2O 3 prepared by plasma-assisted atomic layer deposition (ALD) can actually provide a good level of surface passivation for highly doped n-type emitters in the range of 10-100 Ω/sq with implied-V oc values up to 680 mV. For n-type emitters in the range of 100-200 Ω/sq the implied-V oc drops to a value of 600 mV for a 200 Ω/sq emitter, indicating a decreased level of surface passivation. For even lighter doped n-type surfaces the passivation quality increases again to implied-V oc values well above 700 mV. Hence, the results presented here indicate that within a certain doping range, highly doped n- and p-type surfaces can be passivated simultaneously by Al 2O 3. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi - Rapid Research Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/114871
ISSN: 18626254
DOI: 10.1002/pssr.201105445
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