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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2009
Type:  Article

Results 1-9 of 9 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12009Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM techniqueZhao, H.; Kim, R.; Paul, A.; Luisier, M.; Klimeck, G.; Ma, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
22009Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulationsZhao, H.; Rustagi, S.C.; Ma, F.-J. ; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
32009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
4Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
52009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
62009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
72009Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETsKoh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C. 
8Dec-2009SPICE behavioral model of the tunneling field-effect transistor for circuit simulationHong, Y.; Yang, Y.; Yang, L.; Samudra, G. ; Heng, C.-H. ; Yeo, Y.-C. 
92009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C.