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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2006

Results 1-10 of 10 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12006Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field couplingNg, T.H.; Chim, W.K. ; Choi, W.K. 
228-Apr-2006Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrixChew, H.G.; Choi, W.K. ; Foo, Y.L.; Zheng, F.; Chim, W.K. ; Voon, Z.J.; Seow, K.C.; Fitzgerald, E.A.; Lai, D.M.Y.
310-May-2006Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contactsJin, L.J.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
41-May-2006Electromigration resistance in a short three-contact interconnect treeChang, C.W.; Choi, Z.-S.; Thompson, C.V.; Gan, C.L.; Pey, K.L.; Choi, W.K. ; Hwang, N.
5Aug-2006Fabrication of germanium nanowires by oblique angle depositionChew, H.G.; Choi, W.K. ; Chim, W.K.; Fitzgerald, E.A.
62-Feb-2006Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealingChoi, W.K. ; Chew, H.G.; Ho, V.; Ng, V. ; Chim, W.K. ; Ho, Y.W.; Ng, S.P.
7Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
82006Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles studyZheng, J.X.; Ceder, G.; Maxisch, T.; Chim, W.K. ; Choi, W.K. 
92006Stress development of germanium nanocrystals in silicon oxide matrixChoi, W.K. ; Chew, H.G.; Zheng, F.; Chim, W.K.; Foo, Y.L.; Fitzgerald, E.A.
102006Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gateYu, H.P.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.; Tung, C.H.