Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
 
 
Email
msegongh@nus.edu.sg
 

Refined By:
Type:  Conference Paper

Results 1-20 of 31 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11-Aug-2003A room temperature indium tin oxide/quartz crystal microbalance gas sensor for nitric oxideHu, J.; Zhu, F.; Zhang, J.; Gong, H. 
220-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
32009Annealing effects on ZnO/NiSi contactWei, R.; Gong, H. 
41998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
27751997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
27761997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
277720-Jan-2002Crystal growth of Al-doped ZnO films under different sputtering conditionsGoh, E.G.; Gong, H. 
277820-Jan-2002Crystal structure and gas sensing properties of Cu-doped zinc oxideOng, C.H.; Wang, J.H.; Gong, H. ; Chan, H.S.O. 
277920-Jan-2002Crystal structure and properties of CU-Al-O thin filmsWang, Y. ; Gong, H. ; Liu, L. 
278020-Jan-2002Crystallization and optoelectronic properties of indium-Zinc-Oxide thin films annealed in argon and vacuumChoy, S.F.; Gong, H. ; Zhu, F.
27811999Effect of Cu contamination on electrical characteristics for PMOS transistorsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Chan, L.; See, A.K.
2782Sep-2000Effect of orientation ratio on recording performance for longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
278315-Dec-2003Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputteringOng, C.H.; Gong, H. 
27841997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
27851-Jun-2004FePt and Fe nanocomposite by annealing self-assembled FePt nanoparticlesLu, M.H. ; Song, T.; Zhou, T.J.; Wang, J.P.; Piramanayagam, S.N. ; Ma, W.W.; Gong, H. 
27861993Investigation of charging on α-quartz facets by a SEM techniqueGong, H. ; Le Gressus, C.; Oh, K.H. ; Ding, X.Z.; Ong, C.K. ; Tan, B.T.G. 
278720-Jan-2002Nano-crystal alloy and alloy-oxide coatings and their high-temperature corrosion propertiesGao, W.; Liu, Z.; Li, Z.; Li, S.S.; Gong, H. 
27881996New observation of surface pre-breakdown of polymethyl-methacrcylate in vacuum with a scanning electron microscopeGong, H. ; Ong, C.K. 
27891994Oscillation phenomenon in charging/discharging of small solid insulatorsGong, H. ; Ong, C.K. ; Chen, H.; Le Gressus, C.; Blaise, G.
27902012SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusionHuang, Y.; Zhu, L.; Ong, K.; Teo, H.; Chen, S.; Hua, Y.; Shen, M.; Gong, H.