Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3120694
Title: Annealing effects on ZnO/NiSi contact
Authors: Wei, R.
Gong, H. 
Keywords: Anneal
NiSi
Photoluminescence
Raman spectroscopy
ZnO
Issue Date: 2009
Source: Wei, R.,Gong, H. (2009). Annealing effects on ZnO/NiSi contact. ECS Transactions 19 (3) : 129-135. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3120694
Abstract: NiSi as the electrode of ZnO films was annealed for different temperatures. It was found that with the increase of the temperatures, although the structure quality of ZnO films does not change greatly, the optical properties of the films do indicate the introduction of the oxygen defects into ZnO films by annealing process. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/75214
ISBN: 9781566777117
ISSN: 19385862
DOI: 10.1149/1.3120694
Appears in Collections:Staff Publications

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