Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/75248
Title: SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
Authors: Huang, Y.
Zhu, L.
Ong, K.
Teo, H.
Chen, S.
Hua, Y.
Shen, M.
Gong, H. 
Issue Date: 2012
Source: Huang, Y.,Zhu, L.,Ong, K.,Teo, H.,Chen, S.,Hua, Y.,Shen, M.,Gong, H. (2012). SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 290-292. ScholarBank@NUS Repository.
Abstract: Threshold Voltage (Vt) of MOSFET controls transistor's on and off state. Vt is usually depends on gate oxide thickness and operating temperature. Systematic failure analysis for a Vt shift issue, should also consider the channel doping which affects the inversion layer formation. In this article, the failure case of a shift in the Vt of a Power MOSFET V is studied. Secondary Ion Mass Spectrometry (SIMS) is found to be the most direct way for detecting any abnormality in the channel doping profiles. A comprehensive simulation is performed showing that the Phosphorus level diffusion from substrate was so high that it affects the doping concentration of channel. Copyright © 2012 ASM International® All rights reserved.
Source Title: Conference Proceedings from the International Symposium for Testing and Failure Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/75248
ISBN: 9781615039791
Appears in Collections:Staff Publications

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