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Gong Hao

rp01924

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

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Department:  MATERIALS SCIENCE
Type:  Article
Date Issued:  [2000 TO 2009]

Results 1-20 of 46 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005A study of conduction in the transition zone between homologous and ZnO-rich regions in the In 2 O 3 -ZnO systemKumar, B. ; Gong, H. ; Akkipeddi, R.
2Sep-2000Analysis of triple Co alloy layer magnetic thin films with different bias configurationJin, D.; Wang, J.P.; Gong, H. 
3Jul-2001Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuumsLiu, L. ; Wang, Y. ; Gong, H. 
420-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
5Oct-2001Characterisation of high temperature corrosion products on FeAl intermetallics by XPSXu, C.-H.; Gao, W.; Hyland, M.; Gong, H. 
6May-2001Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Cha, C.L.; Chan, L.; See, A.K.
722-Feb-2005Dopant sources choice for formation of p-type ZnO: Phosphorus compound sourcesYu, Z.G.; Gong, H. ; Wu, P.
8Feb-2005Dynamic thermal degradation studies on amorphous carbon thin filmsLi, Y.Q.; Zhang, L.H.; Gong, H. 
9May-2000Effect of magnetic anisotropy distribution in longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
1020-Oct-2001Effects of nominal intermediate layer on microstructure and magnetic property in CoCrPtTa/CrTi thin filmsJin, D.; Wang, J.P.; Gong, H. 
112000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
121-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
13Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
14Feb-2005Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductorsLin, G.Q. ; Gong, H. ; Wu, P.
15Sep-2002Evaluation of commercial electroless nickel chemicals for a low cost wafer bumping processLu, H.; Kang, C.L.; Wong, S.C.K.; Gong, H. 
161-Jun-2004Evidence of nitric-oxide-induced surface band bending of indium tin oxideHu, J.; Pan, J.; Zhu, F.; Gong, H. 
171-Nov-2005First-principles study of bipolar dopability in the CuInO2 transparent semiconductorLiu, L.; Bai, K.; Gong, H. ; Wu, P.
1815-Sep-2005First-principles study of Sn and Ca doping in CuInO2Liu, L.; Bai, K.; Gong, H. ; Wu, P.
191-Oct-2005High mobility undoped amorphous indium zinc oxide transparent thin filmsKumar, B. ; Gong, H. ; Akkipeddi, R.
20Nov-2000High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVDWang, Y. ; Gong, H.