Evidence of nitric-oxide-induced surface band bending of indium tin oxide

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1719268

Title:	Evidence of nitric-oxide-induced surface band bending of indium tin oxide
Authors:	Hu, J. Pan, J. Zhu, F. Gong, H.
Issue Date:	1-Jun-2004
Citation:	Hu, J., Pan, J., Zhu, F., Gong, H. (2004-06-01). Evidence of nitric-oxide-induced surface band bending of indium tin oxide. Journal of Applied Physics 95 (11 I) : 6273-6276. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1719268
Abstract:	The surface electronic properties of nitric oxide (NO)-treated indium tin oxide (ITO) were examined in situ by a four-point probe and x-ray photoelectron spectroscopy (XPS). It was found that the NO adsorption induced an increase in ITO sheet resistance. A 15 nm thick ITO film was deposited on glass substrate at room temperature by radio frequency magnetron sputtering. XPS analysis shows that molecularly-adsorbed NO resulted a 0.2 eV shift in its VBM edge to a low binding energy.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/107033
ISSN:	00218979
DOI:	10.1063/1.1719268
Appears in Collections:	Staff Publications

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