Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/107063
Title: High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD
Authors: Wang, Y. 
Gong, H. 
Issue Date: Nov-2000
Citation: Wang, Y.,Gong, H. (2000-11). High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD. Advanced Materials 12 (22) : 285-288. ScholarBank@NUS Repository.
Abstract: Stable p-type CuAlO2 thin films were prepared using plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD). The mechanism of p-type conductivity was illustrated.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/107063
ISSN: 09359648
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

25
checked on Sep 21, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.