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|Title:||Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown|
|Citation:||Cha, C.L., Chor, E.F., Gong, H., Chan, L. (2000). Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown. Journal of Materials Science Letters 19 (9) : 817-821. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006745528344|
|Abstract:||The operational reliability of flash memory devices critically depends on the condition of the interface between the floating gate (polysilicon) and the oxide/nitride/oxide (ONO) interpoly dielectric. A rough low-pressure chemical vapor deposition polysilicon floating gate in flash memory devices produces polysilicon/oxide asperities and convex control polysilicon edges, which can heavily stress the ONO dielectric to a faster breakdown during constant current stress tests. A floating gate surface that has a higher concentration of Si-H bonds prior to thermal oxidation suffers a faster ONO breakdown due to the build-up of a higher internal electrical field and negative charge concentration in the dielectric.|
|Source Title:||Journal of Materials Science Letters|
|Appears in Collections:||Staff Publications|
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