Please use this identifier to cite or link to this item: https://doi.org/10.1023/A:1006745528344
Title: Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown
Authors: Cha, C.L.
Chor, E.F. 
Gong, H. 
Chan, L.
Issue Date: 2000
Citation: Cha, C.L., Chor, E.F., Gong, H., Chan, L. (2000). Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown. Journal of Materials Science Letters 19 (9) : 817-821. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006745528344
Abstract: The operational reliability of flash memory devices critically depends on the condition of the interface between the floating gate (polysilicon) and the oxide/nitride/oxide (ONO) interpoly dielectric. A rough low-pressure chemical vapor deposition polysilicon floating gate in flash memory devices produces polysilicon/oxide asperities and convex control polysilicon edges, which can heavily stress the ONO dielectric to a faster breakdown during constant current stress tests. A floating gate surface that has a higher concentration of Si-H bonds prior to thermal oxidation suffers a faster ONO breakdown due to the build-up of a higher internal electrical field and negative charge concentration in the dielectric.
Source Title: Journal of Materials Science Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/50552
ISSN: 02618028
DOI: 10.1023/A:1006745528344
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