Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1819988

Title:	Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces
Authors:	Wang, S.J. Huan, A.C.H. Foo, Y.L. Chai, J.W. Pan, J.S. Li, Q. Dong, Y.F. Feng, Y.P. Ong, C.K.
Issue Date:	8-Nov-2004
Citation:	Wang, S.J., Huan, A.C.H., Foo, Y.L., Chai, J.W., Pan, J.S., Li, Q., Dong, Y.F., Feng, Y.P., Ong, C.K. (2004-11-08). Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces. Applied Physics Letters 85 (19) : 4418-4420. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1819988
Abstract:	The energy-band alignments for the ZrO2/Si, ZrO 2/Si0.75Ge0.25, and ZrO2/Ge interfaces have been studied using x-ray photoemission. The valence-band offsets of ZrO2/Si, ZrO2/Si0.75Ge 0.25, and ZrO2/Ge interfaces are determined to be 2.95, 3.13, and 3.36 eV, respectively, while the conduction-band offsets are found to be the same value of 1.76±0.03 eV for three interfaces. The upward shift of valence-band top accounts for the difference in the energy-band alignment at three interfaces. © 2004 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/98697
ISSN:	00036951
DOI:	10.1063/1.1819988
Appears in Collections:	Staff Publications

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