Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces
Wang, S.J. Huan, A.C.H. Foo, Y.L. Chai, J.W. Pan, J.S. Li, Q. Dong, Y.F. Feng, Y.P. Ong, C.K.
Wang, S.J.
Foo, Y.L.
Chai, J.W.
Pan, J.S.
Li, Q.
Dong, Y.F.
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Abstract
The energy-band alignments for the ZrO2/Si, ZrO 2/Si0.75Ge0.25, and ZrO2/Ge interfaces have been studied using x-ray photoemission. The valence-band offsets of ZrO2/Si, ZrO2/Si0.75Ge 0.25, and ZrO2/Ge interfaces are determined to be 2.95, 3.13, and 3.36 eV, respectively, while the conduction-band offsets are found to be the same value of 1.76±0.03 eV for three interfaces. The upward shift of valence-band top accounts for the difference in the energy-band alignment at three interfaces. © 2004 American Institute of Physics.
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Source Title
Applied Physics Letters
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Date
2004-11-08
DOI
10.1063/1.1819988
Type
Conference Paper