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|Title:||Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces|
|Citation:||Wang, S.J., Huan, A.C.H., Foo, Y.L., Chai, J.W., Pan, J.S., Li, Q., Dong, Y.F., Feng, Y.P., Ong, C.K. (2004-11-08). Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces. Applied Physics Letters 85 (19) : 4418-4420. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1819988|
|Abstract:||The energy-band alignments for the ZrO2/Si, ZrO 2/Si0.75Ge0.25, and ZrO2/Ge interfaces have been studied using x-ray photoemission. The valence-band offsets of ZrO2/Si, ZrO2/Si0.75Ge 0.25, and ZrO2/Ge interfaces are determined to be 2.95, 3.13, and 3.36 eV, respectively, while the conduction-band offsets are found to be the same value of 1.76±0.03 eV for three interfaces. The upward shift of valence-band top accounts for the difference in the energy-band alignment at three interfaces. © 2004 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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