Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1819988
DC FieldValue
dc.titleEnergy-band alignments at ZrO2/Si, SiGe, and Ge interfaces
dc.contributor.authorWang, S.J.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorFoo, Y.L.
dc.contributor.authorChai, J.W.
dc.contributor.authorPan, J.S.
dc.contributor.authorLi, Q.
dc.contributor.authorDong, Y.F.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:50:19Z
dc.date.available2014-10-16T09:50:19Z
dc.date.issued2004-11-08
dc.identifier.citationWang, S.J., Huan, A.C.H., Foo, Y.L., Chai, J.W., Pan, J.S., Li, Q., Dong, Y.F., Feng, Y.P., Ong, C.K. (2004-11-08). Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces. Applied Physics Letters 85 (19) : 4418-4420. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1819988
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98697
dc.description.abstractThe energy-band alignments for the ZrO2/Si, ZrO 2/Si0.75Ge0.25, and ZrO2/Ge interfaces have been studied using x-ray photoemission. The valence-band offsets of ZrO2/Si, ZrO2/Si0.75Ge 0.25, and ZrO2/Ge interfaces are determined to be 2.95, 3.13, and 3.36 eV, respectively, while the conduction-band offsets are found to be the same value of 1.76±0.03 eV for three interfaces. The upward shift of valence-band top accounts for the difference in the energy-band alignment at three interfaces. © 2004 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1819988
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1819988
dc.description.sourcetitleApplied Physics Letters
dc.description.volume85
dc.description.issue19
dc.description.page4418-4420
dc.description.codenAPPLA
dc.identifier.isiut000224962800051
Appears in Collections:Staff Publications

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