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|Title:||Study of surface microtopography of InAlAs/InP heterostructures grown by MBE||Authors:||Taijing, L.
|Keywords:||A: thin films
C: impurities in semiconductors
|Issue Date:||Dec-1994||Citation:||Taijing, L.,Zhenhoug, M.,Chao, J.,Sekiguchi, T.,Ong, C.K.,Ogawa, T.,Ming, Z.J.,Sumino, K. (1994-12). Study of surface microtopography of InAlAs/InP heterostructures grown by MBE. Solid State Communications 92 (12) : 983-985. ScholarBank@NUS Repository.||Abstract:||This paper reports the results of surface microtopographic study on InAlAs/InP heterostructures. There are many precipitates enriched in In on the as-grown InAlAs surface and when the size of the precipitates is larger than a critical size of 10 μm, they act as growth centers to form an eccentric multi-monomolecular growth spiral on the (100) face. © 1994.||Source Title:||Solid State Communications||URI:||http://scholarbank.nus.edu.sg/handle/10635/98094||ISSN:||00381098|
|Appears in Collections:||Staff Publications|
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