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Title: Study of surface microtopography of InAlAs/InP heterostructures grown by MBE
Authors: Taijing, L. 
Zhenhoug, M.
Chao, J.
Sekiguchi, T.
Ong, C.K. 
Ogawa, T.
Ming, Z.J.
Sumino, K.
Keywords: A: thin films
B: epitaxy
C: impurities in semiconductors
Issue Date: Dec-1994
Citation: Taijing, L.,Zhenhoug, M.,Chao, J.,Sekiguchi, T.,Ong, C.K.,Ogawa, T.,Ming, Z.J.,Sumino, K. (1994-12). Study of surface microtopography of InAlAs/InP heterostructures grown by MBE. Solid State Communications 92 (12) : 983-985. ScholarBank@NUS Repository.
Abstract: This paper reports the results of surface microtopographic study on InAlAs/InP heterostructures. There are many precipitates enriched in In on the as-grown InAlAs surface and when the size of the precipitates is larger than a critical size of 10 μm, they act as growth centers to form an eccentric multi-monomolecular growth spiral on the (100) face. © 1994.
Source Title: Solid State Communications
ISSN: 00381098
Appears in Collections:Staff Publications

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