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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98094
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dc.titleStudy of surface microtopography of InAlAs/InP heterostructures grown by MBE
dc.contributor.authorTaijing, L.
dc.contributor.authorZhenhoug, M.
dc.contributor.authorChao, J.
dc.contributor.authorSekiguchi, T.
dc.contributor.authorOng, C.K.
dc.contributor.authorOgawa, T.
dc.contributor.authorMing, Z.J.
dc.contributor.authorSumino, K.
dc.date.accessioned2014-10-16T09:42:58Z
dc.date.available2014-10-16T09:42:58Z
dc.date.issued1994-12
dc.identifier.citationTaijing, L.,Zhenhoug, M.,Chao, J.,Sekiguchi, T.,Ong, C.K.,Ogawa, T.,Ming, Z.J.,Sumino, K. (1994-12). Study of surface microtopography of InAlAs/InP heterostructures grown by MBE. Solid State Communications 92 (12) : 983-985. ScholarBank@NUS Repository.
dc.identifier.issn00381098
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98094
dc.description.abstractThis paper reports the results of surface microtopographic study on InAlAs/InP heterostructures. There are many precipitates enriched in In on the as-grown InAlAs surface and when the size of the precipitates is larger than a critical size of 10 μm, they act as growth centers to form an eccentric multi-monomolecular growth spiral on the (100) face. © 1994.
dc.sourceScopus
dc.subjectA: thin films
dc.subjectB: epitaxy
dc.subjectC: impurities in semiconductors
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleSolid State Communications
dc.description.volume92
dc.description.issue12
dc.description.page983-985
dc.description.codenSSCOA
dc.identifier.isiutNOT_IN_WOS
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