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|Title:||In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films||Authors:||Ong, C.K.
|Keywords:||Dielectric thin films
Reflection high-energy electron diffraction
Surface and interfaces
|Issue Date:||28-Dec-2001||Citation:||Ong, C.K., Wang, S.J. (2001-12-28). In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films. Applied Surface Science 185 (1-2) : 47-51. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(01)00589-X||Abstract:||Epitaxial anatase TiO2 thin films were successfully grown on (001) SrTiO3 substrates by the laser molecular-beam epitaxy (laser-MBE) method. The whole growth process is monitored by in situ reflection high-energy electron diffraction (RHEED). RHEED monitoring shows a transition from a streaky pattern to a spot pattern during deposition, indicating different growth modes of TiO2 film. The RHEED patterns are in consistent with the RHEED intensity oscillation results. The atomic force microscopy (AFM) and X-ray diffraction (XRD) investigation show that the thin films have single crystalline orientation with roughness less than three unit cells. © 2001 Elsevier Science B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/96894||ISSN:||01694332||DOI:||10.1016/S0169-4332(01)00589-X|
|Appears in Collections:||Staff Publications|
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