Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0169-4332(01)00589-X
DC FieldValue
dc.titleIn situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films
dc.contributor.authorOng, C.K.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-16T09:28:48Z
dc.date.available2014-10-16T09:28:48Z
dc.date.issued2001-12-28
dc.identifier.citationOng, C.K., Wang, S.J. (2001-12-28). In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films. Applied Surface Science 185 (1-2) : 47-51. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(01)00589-X
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96894
dc.description.abstractEpitaxial anatase TiO2 thin films were successfully grown on (001) SrTiO3 substrates by the laser molecular-beam epitaxy (laser-MBE) method. The whole growth process is monitored by in situ reflection high-energy electron diffraction (RHEED). RHEED monitoring shows a transition from a streaky pattern to a spot pattern during deposition, indicating different growth modes of TiO2 film. The RHEED patterns are in consistent with the RHEED intensity oscillation results. The atomic force microscopy (AFM) and X-ray diffraction (XRD) investigation show that the thin films have single crystalline orientation with roughness less than three unit cells. © 2001 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0169-4332(01)00589-X
dc.sourceScopus
dc.subjectDielectric thin films
dc.subjectLaser deposition
dc.subjectReflection high-energy electron diffraction
dc.subjectSurface and interfaces
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0169-4332(01)00589-X
dc.description.sourcetitleApplied Surface Science
dc.description.volume185
dc.description.issue1-2
dc.description.page47-51
dc.description.codenASUSE
dc.identifier.isiut000173117500006
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