Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0169-4332(01)00589-X
Title: In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films
Authors: Ong, C.K. 
Wang, S.J. 
Keywords: Dielectric thin films
Laser deposition
Reflection high-energy electron diffraction
Surface and interfaces
Issue Date: 28-Dec-2001
Citation: Ong, C.K., Wang, S.J. (2001-12-28). In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films. Applied Surface Science 185 (1-2) : 47-51. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(01)00589-X
Abstract: Epitaxial anatase TiO2 thin films were successfully grown on (001) SrTiO3 substrates by the laser molecular-beam epitaxy (laser-MBE) method. The whole growth process is monitored by in situ reflection high-energy electron diffraction (RHEED). RHEED monitoring shows a transition from a streaky pattern to a spot pattern during deposition, indicating different growth modes of TiO2 film. The RHEED patterns are in consistent with the RHEED intensity oscillation results. The atomic force microscopy (AFM) and X-ray diffraction (XRD) investigation show that the thin films have single crystalline orientation with roughness less than three unit cells. © 2001 Elsevier Science B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96894
ISSN: 01694332
DOI: 10.1016/S0169-4332(01)00589-X
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