Impact of oxide defects on band offset at GeO2 /Ge interface

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3115824

Title:	Impact of oxide defects on band offset at GeO2 /Ge interface
Authors:	Yang, M. Wu, R.Q. Chen, Q. Deng, W.S. Feng, Y.P. Chai, J.W. Pan, J.S. Wang, S.J.
Issue Date:	2009
Citation:	Yang, M., Wu, R.Q., Chen, Q., Deng, W.S., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J. (2009). Impact of oxide defects on band offset at GeO2 /Ge interface. Applied Physics Letters 94 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3115824
Abstract:	High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2 /Ge (001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego, Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)]. © 2009 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/96874
ISSN:	00036951
DOI:	10.1063/1.3115824
Appears in Collections:	Staff Publications

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