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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3115824
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dc.titleImpact of oxide defects on band offset at GeO2 /Ge interface
dc.contributor.authorYang, M.
dc.contributor.authorWu, R.Q.
dc.contributor.authorChen, Q.
dc.contributor.authorDeng, W.S.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorChai, J.W.
dc.contributor.authorPan, J.S.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-16T09:28:35Z
dc.date.available2014-10-16T09:28:35Z
dc.date.issued2009
dc.identifier.citationYang, M., Wu, R.Q., Chen, Q., Deng, W.S., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J. (2009). Impact of oxide defects on band offset at GeO2 /Ge interface. Applied Physics Letters 94 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3115824
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96874
dc.description.abstractHigh quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2 /Ge (001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego, Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)]. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3115824
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3115824
dc.description.sourcetitleApplied Physics Letters
dc.description.volume94
dc.description.issue14
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000265083700047
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