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|Title:||A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition||Authors:||Ong, C.K.
|Issue Date:||1998||Citation:||Ong, C.K., Xu, S.Y., Zhou, W.Z. (1998). A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition. Review of Scientific Instruments 69 (10) : 3659-3661. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1149168||Abstract:||Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows insitu controlling doping under a wide range of conditions. We demonstrated doping Ag insitu in YBa2Cu3O7-δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.||Source Title:||Review of Scientific Instruments||URI:||http://scholarbank.nus.edu.sg/handle/10635/95657||ISSN:||00346748||DOI:||10.1063/1.1149168|
|Appears in Collections:||Staff Publications|
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