Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1149168
Title: A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition
Authors: Ong, C.K. 
Xu, S.Y. 
Zhou, W.Z.
Issue Date: 1998
Citation: Ong, C.K., Xu, S.Y., Zhou, W.Z. (1998). A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition. Review of Scientific Instruments 69 (10) : 3659-3661. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1149168
Abstract: Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows insitu controlling doping under a wide range of conditions. We demonstrated doping Ag insitu in YBa2Cu3O7-δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.
Source Title: Review of Scientific Instruments
URI: http://scholarbank.nus.edu.sg/handle/10635/95657
ISSN: 00346748
DOI: 10.1063/1.1149168
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Jul 17, 2018

WEB OF SCIENCETM
Citations

15
checked on Jun 20, 2018

Page view(s)

35
checked on Jun 22, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.