Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1149168
DC Field | Value | |
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dc.title | A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition | |
dc.contributor.author | Ong, C.K. | |
dc.contributor.author | Xu, S.Y. | |
dc.contributor.author | Zhou, W.Z. | |
dc.date.accessioned | 2014-10-16T09:14:17Z | |
dc.date.available | 2014-10-16T09:14:17Z | |
dc.date.issued | 1998 | |
dc.identifier.citation | Ong, C.K., Xu, S.Y., Zhou, W.Z. (1998). A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition. Review of Scientific Instruments 69 (10) : 3659-3661. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1149168 | |
dc.identifier.issn | 00346748 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/95657 | |
dc.description.abstract | Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows insitu controlling doping under a wide range of conditions. We demonstrated doping Ag insitu in YBa2Cu3O7-δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1149168 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.1149168 | |
dc.description.sourcetitle | Review of Scientific Instruments | |
dc.description.volume | 69 | |
dc.description.issue | 10 | |
dc.description.page | 3659-3661 | |
dc.description.coden | RSINA | |
dc.identifier.isiut | 000076430000034 | |
Appears in Collections: | Staff Publications |
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