Please use this identifier to cite or link to this item:
|Title:||A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor||Authors:||Chang, J.
|Issue Date:||21-May-2013||Citation:||Chang, J., Shao, J., Zhang, J., Wu, J., Chi, C. (2013-05-21). A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor. RSC Advances 3 (19) : 6775-6778. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra40504d||Abstract:||A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64. © 2013 The Royal Society of Chemistry.||Source Title:||RSC Advances||URI:||http://scholarbank.nus.edu.sg/handle/10635/92990||ISSN:||20462069||DOI:||10.1039/c3ra40504d|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 18, 2021
WEB OF SCIENCETM
checked on Jan 11, 2021
checked on Jan 17, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.