A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Please use this identifier to cite or link to this item: https://doi.org/10.1039/c3ra40504d

Title:	A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor
Authors:	Chang, J. Shao, J. Zhang, J. Wu, J. Chi, C.
Issue Date:	21-May-2013
Citation:	Chang, J., Shao, J., Zhang, J., Wu, J., Chi, C. (2013-05-21). A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor. RSC Advances 3 (19) : 6775-6778. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra40504d
Abstract:	A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64. © 2013 The Royal Society of Chemistry.
Source Title:	RSC Advances
URI:	http://scholarbank.nus.edu.sg/handle/10635/92990
ISSN:	20462069
DOI:	10.1039/c3ra40504d
Appears in Collections:	Staff Publications

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