Please use this identifier to cite or link to this item: https://doi.org/10.1039/c3ra40504d
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dc.titleA phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor
dc.contributor.authorChang, J.
dc.contributor.authorShao, J.
dc.contributor.authorZhang, J.
dc.contributor.authorWu, J.
dc.contributor.authorChi, C.
dc.date.accessioned2014-10-16T08:19:05Z
dc.date.available2014-10-16T08:19:05Z
dc.date.issued2013-05-21
dc.identifier.citationChang, J., Shao, J., Zhang, J., Wu, J., Chi, C. (2013-05-21). A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor. RSC Advances 3 (19) : 6775-6778. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra40504d
dc.identifier.issn20462069
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/92990
dc.description.abstractA phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64. © 2013 The Royal Society of Chemistry.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c3ra40504d
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1039/c3ra40504d
dc.description.sourcetitleRSC Advances
dc.description.volume3
dc.description.issue19
dc.description.page6775-6778
dc.identifier.isiut000317929800011
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