Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/92775

Title:	Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition
Authors:	Liu, J.-M. Xu, S.Y. Zhou, W.Z. Jiang, X.H. Ong, C.K. Lim, L.C.
Keywords:	Ferroelectric and piezoelectric property Pulsed laser deposition PZT thick film
Issue Date:	1999
Citation:	Liu, J.-M.,Xu, S.Y.,Zhou, W.Z.,Jiang, X.H.,Ong, C.K.,Lim, L.C. (1999). Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition. Materials Science and Engineering A 269 (1-2) : 67-72. ScholarBank@NUS Repository.
Abstract:	Completely (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films up to ∼ 10 μm thick, deposited on (100) silicon wafers with Y-stabilized ZrO2 (YSZ) as buffer and YBCO as electrode, are prepared by using pulsed laser deposition. The X-ray rocking curve scanning with respect to (001) reflection of 6.0-μm thick films exhibits the FWHM of only 0.6-0.7°. Small grain size and smooth surface of the as-prepared films were identified. The performance of YSZ as excellent resisting layer against silicon diffusion was confirmed by the SIMS measurements. The electrical property evaluations demonstrated quite good ferroelectric property. A piezoelectric coefficient d31 ∼ -300 pC/N, acceptable for piezoelectric applications, was measured. © 1999 Elsevier Science S.A. All rights reserved.
Source Title:	Materials Science and Engineering A
URI:	http://scholarbank.nus.edu.sg/handle/10635/92775
ISSN:	09215093
Appears in Collections:	Staff Publications

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