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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/92775
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dc.titlePreparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition
dc.contributor.authorLiu, J.-M.
dc.contributor.authorXu, S.Y.
dc.contributor.authorZhou, W.Z.
dc.contributor.authorJiang, X.H.
dc.contributor.authorOng, C.K.
dc.contributor.authorLim, L.C.
dc.date.accessioned2014-10-16T03:08:21Z
dc.date.available2014-10-16T03:08:21Z
dc.date.issued1999
dc.identifier.citationLiu, J.-M.,Xu, S.Y.,Zhou, W.Z.,Jiang, X.H.,Ong, C.K.,Lim, L.C. (1999). Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition. Materials Science and Engineering A 269 (1-2) : 67-72. ScholarBank@NUS Repository.
dc.identifier.issn09215093
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/92775
dc.description.abstractCompletely (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films up to ∼ 10 μm thick, deposited on (100) silicon wafers with Y-stabilized ZrO2 (YSZ) as buffer and YBCO as electrode, are prepared by using pulsed laser deposition. The X-ray rocking curve scanning with respect to (001) reflection of 6.0-μm thick films exhibits the FWHM of only 0.6-0.7°. Small grain size and smooth surface of the as-prepared films were identified. The performance of YSZ as excellent resisting layer against silicon diffusion was confirmed by the SIMS measurements. The electrical property evaluations demonstrated quite good ferroelectric property. A piezoelectric coefficient d31 ∼ -300 pC/N, acceptable for piezoelectric applications, was measured. © 1999 Elsevier Science S.A. All rights reserved.
dc.sourceScopus
dc.subjectFerroelectric and piezoelectric property
dc.subjectPulsed laser deposition
dc.subjectPZT thick film
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentMECHANICAL & PRODUCTION ENGINEERING
dc.description.sourcetitleMaterials Science and Engineering A
dc.description.volume269
dc.description.issue1-2
dc.description.page67-72
dc.identifier.isiutNOT_IN_WOS
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