Characterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.01.130

Title:	Characterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition
Authors:	Tang, S.B. Xia, H. Lai, M.O. Lu, L.
Keywords:	Capacity LiMn2O4 thin films Pulsed laser deposition Raman XRD
Issue Date:	31-Jan-2008
Citation:	Tang, S.B., Xia, H., Lai, M.O., Lu, L. (2008-01-31). Characterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition. Journal of Alloys and Compounds 449 (1-2) : 322-325. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.01.130
Abstract:	LiMn2O4 thin films were deposited on Si substrates at 575 °C and 100 mTorr of oxygen by pulsed laser deposition. The film was flat and dense with an average size of crystals of about 260 nm and showed mainly (1 1 1) out-of plane preferred texture. The initial specific capacity was about 111 mAh/g with a current density of 50 μAh/cm2. Ex situ XRD and Raman were used to investigate the structure changes of LiMn2O4 thin film after intercalation and deintercalation of lithium. XRD results revealed a relatively smaller lattice change with the removal of lithium in this thin film, compared to that of powder LiMn2O4 cathode. © 2006 Elsevier B.V. All rights reserved.
Source Title:	Journal of Alloys and Compounds
URI:	http://scholarbank.nus.edu.sg/handle/10635/84908
ISSN:	09258388
DOI:	10.1016/j.jallcom.2006.01.130
Appears in Collections:	Staff Publications

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