Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.01.130
Title: Characterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition
Authors: Tang, S.B. 
Xia, H. 
Lai, M.O. 
Lu, L. 
Keywords: Capacity
LiMn2O4 thin films
Pulsed laser deposition
Raman
XRD
Issue Date: 31-Jan-2008
Citation: Tang, S.B., Xia, H., Lai, M.O., Lu, L. (2008-01-31). Characterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition. Journal of Alloys and Compounds 449 (1-2) : 322-325. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.01.130
Abstract: LiMn2O4 thin films were deposited on Si substrates at 575 °C and 100 mTorr of oxygen by pulsed laser deposition. The film was flat and dense with an average size of crystals of about 260 nm and showed mainly (1 1 1) out-of plane preferred texture. The initial specific capacity was about 111 mAh/g with a current density of 50 μAh/cm2. Ex situ XRD and Raman were used to investigate the structure changes of LiMn2O4 thin film after intercalation and deintercalation of lithium. XRD results revealed a relatively smaller lattice change with the removal of lithium in this thin film, compared to that of powder LiMn2O4 cathode. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Alloys and Compounds
URI: http://scholarbank.nus.edu.sg/handle/10635/84908
ISSN: 09258388
DOI: 10.1016/j.jallcom.2006.01.130
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