Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.01.130
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dc.titleCharacterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition
dc.contributor.authorTang, S.B.
dc.contributor.authorXia, H.
dc.contributor.authorLai, M.O.
dc.contributor.authorLu, L.
dc.date.accessioned2014-10-07T09:01:42Z
dc.date.available2014-10-07T09:01:42Z
dc.date.issued2008-01-31
dc.identifier.citationTang, S.B., Xia, H., Lai, M.O., Lu, L. (2008-01-31). Characterization of LiMn2O4 thin films grown on Si substrates by pulsed laser deposition. Journal of Alloys and Compounds 449 (1-2) : 322-325. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.01.130
dc.identifier.issn09258388
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84908
dc.description.abstractLiMn2O4 thin films were deposited on Si substrates at 575 °C and 100 mTorr of oxygen by pulsed laser deposition. The film was flat and dense with an average size of crystals of about 260 nm and showed mainly (1 1 1) out-of plane preferred texture. The initial specific capacity was about 111 mAh/g with a current density of 50 μAh/cm2. Ex situ XRD and Raman were used to investigate the structure changes of LiMn2O4 thin film after intercalation and deintercalation of lithium. XRD results revealed a relatively smaller lattice change with the removal of lithium in this thin film, compared to that of powder LiMn2O4 cathode. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jallcom.2006.01.130
dc.sourceScopus
dc.subjectCapacity
dc.subjectLiMn2O4 thin films
dc.subjectPulsed laser deposition
dc.subjectRaman
dc.subjectXRD
dc.typeArticle
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1016/j.jallcom.2006.01.130
dc.description.sourcetitleJournal of Alloys and Compounds
dc.description.volume449
dc.description.issue1-2
dc.description.page322-325
dc.description.codenJALCE
dc.identifier.isiut000252737500074
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