Pulsed laser deposition of carbon nitride materials

Abstract

Synthesis of carbon nitride has been an important topic in materials science since 1993. Ion-assisted pulsed laser deposition is proven to be a good method to deposit carbon nitride thin films. Both amorphous and crystal β-C3N4 layers can be deposited on many substrates. A standard experimental set-up comprises a pulsed KrF excimer laser (wavelength 248 nm, duration ∼30 ns) that is used to ablate the graphite target and a nitrogen ion beam bombarding simultaneously on the substrate. A variety of experimental derivatives have been developed based on pulsed laser deposition. The deposited thin films have been characterized by Auger Electron Spectroscope (AES), X-ray Photoelectron Spectroscopy (XPS), Mass Time of Flight spectrum (TOF), Optical Emission Spectrum (OES), Rutherford Backscattering (RBS), High Energy Backscattering (HEBS), Raman spectroscopy, Fourier Transform Infra-red Spectroscopy (FTIR), Ellipsometry, Electron Diffraction, Scanning Tunnelling Microscope (STM) and Atomic force microscope (AFM). Investigations are carried out to identify the binding structure, nitrogen content, electronic properties, optical properties and crystal structures of the deposited thin films.