Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.456817
DC FieldValue
dc.titlePulsed laser deposition of carbon nitride materials
dc.contributor.authorRen, Z.M.
dc.contributor.authorLu, Y.F.
dc.contributor.authorHe, Z.F.
dc.date.accessioned2014-10-07T04:49:01Z
dc.date.available2014-10-07T04:49:01Z
dc.date.issued2002
dc.identifier.citationRen, Z.M., Lu, Y.F., He, Z.F. (2002). Pulsed laser deposition of carbon nitride materials. Proceedings of SPIE - The International Society for Optical Engineering 4426 : 210-216. ScholarBank@NUS Repository. https://doi.org/10.1117/12.456817
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84118
dc.description.abstractSynthesis of carbon nitride has been an important topic in materials science since 1993. Ion-assisted pulsed laser deposition is proven to be a good method to deposit carbon nitride thin films. Both amorphous and crystal β-C3N4 layers can be deposited on many substrates. A standard experimental set-up comprises a pulsed KrF excimer laser (wavelength 248 nm, duration ∼30 ns) that is used to ablate the graphite target and a nitrogen ion beam bombarding simultaneously on the substrate. A variety of experimental derivatives have been developed based on pulsed laser deposition. The deposited thin films have been characterized by Auger Electron Spectroscope (AES), X-ray Photoelectron Spectroscopy (XPS), Mass Time of Flight spectrum (TOF), Optical Emission Spectrum (OES), Rutherford Backscattering (RBS), High Energy Backscattering (HEBS), Raman spectroscopy, Fourier Transform Infra-red Spectroscopy (FTIR), Ellipsometry, Electron Diffraction, Scanning Tunnelling Microscope (STM) and Atomic force microscope (AFM). Investigations are carried out to identify the binding structure, nitrogen content, electronic properties, optical properties and crystal structures of the deposited thin films.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.456817
dc.sourceScopus
dc.subjectβ-C3N4
dc.subjectCarbon nitride
dc.subjectIon-assisted
dc.subjectLaser ablation
dc.subjectThin films
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.456817
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume4426
dc.description.page210-216
dc.description.codenPSISD
dc.identifier.isiut000176422100046
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