Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1459682

Title:	Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation
Authors:	Ang, C.H. Tan, S.S. Lek, C.M. Lin, W. Zheng, Z.J. Chen, T. Cho, B.J.
Issue Date:	Apr-2002
Citation:	Ang, C.H., Tan, S.S., Lek, C.M., Lin, W., Zheng, Z.J., Chen, T., Cho, B.J. (2002-04). Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation. Electrochemical and Solid-State Letters 5 (4) : G26-G28. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1459682
Abstract:	The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxides (1.8 and 2.6 nm) have been investigated and compared with NO nitridation. It is found that plasma-nitrided oxides are more immune to nitridation-induced degradation of channel hole mobility, and have lower intrinsic interface-trap density as compared to NO-nitrided oxides. In addition, plasma-nitrided oxides can further suppress hole mobility degradation induced by boron penetration. The superior performance of nitrogen plasma nitridation is attributed to its capability of incorporating a high level of nitrogen at the top oxide surface, while keeping the Si-SiO2 interface intact.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83119
ISSN:	10990062
DOI:	10.1149/1.1459682
Appears in Collections:	Staff Publications

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