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|Title:||Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation|
|Citation:||Ang, C.H., Tan, S.S., Lek, C.M., Lin, W., Zheng, Z.J., Chen, T., Cho, B.J. (2002-04). Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation. Electrochemical and Solid-State Letters 5 (4) : G26-G28. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1459682|
|Abstract:||The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxides (1.8 and 2.6 nm) have been investigated and compared with NO nitridation. It is found that plasma-nitrided oxides are more immune to nitridation-induced degradation of channel hole mobility, and have lower intrinsic interface-trap density as compared to NO-nitrided oxides. In addition, plasma-nitrided oxides can further suppress hole mobility degradation induced by boron penetration. The superior performance of nitrogen plasma nitridation is attributed to its capability of incorporating a high level of nitrogen at the top oxide surface, while keeping the Si-SiO2 interface intact.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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