Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2013.2271643
Title: | Phase change liner stressor for strain engineering of P-channel FinFETs | Authors: | Ding, Y. Cheng, R. Koh, S.-M. Liu, B. Yeo, Y.-C. |
Keywords: | FinFET Ge2Sb2Te5 (GST) Multigate FET Phase change Strai |
Issue Date: | 2013 | Citation: | Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Yeo, Y.-C. (2013). Phase change liner stressor for strain engineering of P-channel FinFETs. IEEE Transactions on Electron Devices 60 (9) : 2703-2711. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2271643 | Abstract: | A novel Ge2Sb2Te5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain engineering of p-FinFETs. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Saturation drain current enhancement of ~80% and linear drain current enhancement of ~110% are observed for FinFETs with c-GST liner stressor over the control or unstrained FinFETs. The drain current enhancement is higher for 0° rotated FinFETs as compared with that of the FinFETs with 45° rotation, due to the orientation-dependent piezoresistance coefficients. The drain current enhancement increases with decreasing gate length. GST liner stressor could be a strain engineering option in sub-20-nm technology nodes. © 1963-2012 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82884 | ISSN: | 00189383 | DOI: | 10.1109/TED.2013.2271643 |
Appears in Collections: | Staff Publications |
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