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|Title:||Phase change liner stressor for strain engineering of P-channel FinFETs|
|Citation:||Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Yeo, Y.-C. (2013). Phase change liner stressor for strain engineering of P-channel FinFETs. IEEE Transactions on Electron Devices 60 (9) : 2703-2711. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2271643|
|Abstract:||A novel Ge2Sb2Te5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain engineering of p-FinFETs. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Saturation drain current enhancement of ~80% and linear drain current enhancement of ~110% are observed for FinFETs with c-GST liner stressor over the control or unstrained FinFETs. The drain current enhancement is higher for 0° rotated FinFETs as compared with that of the FinFETs with 45° rotation, due to the orientation-dependent piezoresistance coefficients. The drain current enhancement increases with decreasing gate length. GST liner stressor could be a strain engineering option in sub-20-nm technology nodes. © 1963-2012 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
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