Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2013.2271643
DC Field | Value | |
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dc.title | Phase change liner stressor for strain engineering of P-channel FinFETs | |
dc.contributor.author | Ding, Y. | |
dc.contributor.author | Cheng, R. | |
dc.contributor.author | Koh, S.-M. | |
dc.contributor.author | Liu, B. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:34:38Z | |
dc.date.available | 2014-10-07T04:34:38Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Yeo, Y.-C. (2013). Phase change liner stressor for strain engineering of P-channel FinFETs. IEEE Transactions on Electron Devices 60 (9) : 2703-2711. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2271643 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82884 | |
dc.description.abstract | A novel Ge2Sb2Te5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain engineering of p-FinFETs. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Saturation drain current enhancement of ~80% and linear drain current enhancement of ~110% are observed for FinFETs with c-GST liner stressor over the control or unstrained FinFETs. The drain current enhancement is higher for 0° rotated FinFETs as compared with that of the FinFETs with 45° rotation, due to the orientation-dependent piezoresistance coefficients. The drain current enhancement increases with decreasing gate length. GST liner stressor could be a strain engineering option in sub-20-nm technology nodes. © 1963-2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2013.2271643 | |
dc.source | Scopus | |
dc.subject | FinFET | |
dc.subject | Ge2Sb2Te5 (GST) | |
dc.subject | Multigate FET | |
dc.subject | Phase change | |
dc.subject | Strai | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2013.2271643 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 60 | |
dc.description.issue | 9 | |
dc.description.page | 2703-2711 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000323640300001 | |
Appears in Collections: | Staff Publications |
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