Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.974579
Title: New salicidation technology with Ni(Pt) alloy for MOSFETs
Authors: Lee, P.S.
Pey, K.L. 
Mangelinck, D.
Ding, J. 
Chi, D.Z.
Chan, L.
Keywords: Ni(Pt)Si
NiSi
Salicidation
Issue Date: Dec-2001
Citation: Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L. (2001-12). New salicidation technology with Ni(Pt) alloy for MOSFETs. IEEE Electron Device Letters 22 (12) : 568-570. ScholarBank@NUS Repository. https://doi.org/10.1109/55.974579
Abstract: A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82755
ISSN: 07413106
DOI: 10.1109/55.974579
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