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|Title:||New salicidation technology with Ni(Pt) alloy for MOSFETs||Authors:||Lee, P.S.
|Issue Date:||Dec-2001||Citation:||Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L. (2001-12). New salicidation technology with Ni(Pt) alloy for MOSFETs. IEEE Electron Device Letters 22 (12) : 568-570. ScholarBank@NUS Repository. https://doi.org/10.1109/55.974579||Abstract:||A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82755||ISSN:||07413106||DOI:||10.1109/55.974579|
|Appears in Collections:||Staff Publications|
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