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Title: New salicidation technology with Ni(Pt) alloy for MOSFETs
Authors: Lee, P.S.
Pey, K.L. 
Mangelinck, D.
Ding, J. 
Chi, D.Z.
Chan, L.
Keywords: Ni(Pt)Si
Issue Date: Dec-2001
Citation: Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L. (2001-12). New salicidation technology with Ni(Pt) alloy for MOSFETs. IEEE Electron Device Letters 22 (12) : 568-570. ScholarBank@NUS Repository.
Abstract: A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/55.974579
Appears in Collections:Staff Publications

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