Please use this identifier to cite or link to this item:
|Title:||New salicidation technology with Ni(Pt) alloy for MOSFETs|
|Citation:||Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L. (2001-12). New salicidation technology with Ni(Pt) alloy for MOSFETs. IEEE Electron Device Letters 22 (12) : 568-570. ScholarBank@NUS Repository. https://doi.org/10.1109/55.974579|
|Abstract:||A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 21, 2018
WEB OF SCIENCETM
checked on May 9, 2018
checked on May 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.