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Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.974579
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dc.titleNew salicidation technology with Ni(Pt) alloy for MOSFETs
dc.contributor.authorLee, P.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorMangelinck, D.
dc.contributor.authorDing, J.
dc.contributor.authorChi, D.Z.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T04:33:07Z
dc.date.available2014-10-07T04:33:07Z
dc.date.issued2001-12
dc.identifier.citationLee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L. (2001-12). New salicidation technology with Ni(Pt) alloy for MOSFETs. IEEE Electron Device Letters 22 (12) : 568-570. ScholarBank@NUS Repository. https://doi.org/10.1109/55.974579
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82755
dc.description.abstractA novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.974579
dc.sourceScopus
dc.subjectNi(Pt)Si
dc.subjectNiSi
dc.subjectSalicidation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1109/55.974579
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume22
dc.description.issue12
dc.description.page568-570
dc.description.codenEDLED
dc.identifier.isiut000173223900002
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