Please use this identifier to cite or link to this item:
|Title:||Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications||Authors:||Kumar, A.
|Issue Date:||7-Jun-2013||Citation:||Kumar, A., Dalapati, G.K., Hidayat, H., Law, F., Tan, H.R., Widenborg, P.I., Hoex, B., Tan, C.C., Chi, D.Z., Aberle, A.G. (2013-06-07). Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications. RSC Advances 3 (21) : 7733-7738. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra41156g||Abstract:||Aluminum-alloyed polycrystalline p-type β-phase iron disilicide p-β-FeSi2(Al) films with different thicknesses are successfully integrated with n-type polycrystalline silicon films on glass for thin-film solar cell applications. A sharp and high-quality interface is formed between 49 nm thick β-FeSi2(Al) and poly-Si, through the formation of a thin layer (∼7 nm) of Al-doped p+ epitaxial Si. The quality of the interface between poly-Si and p-β-FeSi2(Al) is found to degrade with increasing p-β-FeSi2(Al) thickness. An ∼5 nm thick amorphous layer is observed at the interface for the 145 nm thick p-β-FeSi2(Al) layer. The structural and photovoltaic characteristics of the p-type β-FeSi2/p+ Si/n - Si/n+ Si solar cell samples are investigated in detail. For a sample annealed at 650 °C, a one-Sun open-circuit voltage of 320 mV and pseudo fill factor of 67% are obtained, using an ∼49 nm p-type β-FeSi2 film on n-type poly-Si. The efficiency of the investigated solar cell structure decreases with increasing annealing temperature and thickness of the β-FeSi2 film. © 2013 The Royal Society of Chemistry.||Source Title:||RSC Advances||URI:||http://scholarbank.nus.edu.sg/handle/10635/82552||ISSN:||20462069||DOI:||10.1039/c3ra41156g|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 27, 2020
WEB OF SCIENCETM
checked on Nov 18, 2020
checked on Nov 23, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.